For the first time , the energy band configuration of p - si / n - bn heterojunctions were studied and drawn up . the study of the current - voltage ( i - v ) characteristics showed significant rectifying behavior with reverse saturation current of 3 . 7 x 10 ~ 7a , breakdown voltage of 30v and turn on voltage of 14v . the capacity - voltage ( c - v ) characteristics are studied too 研究了p - si / n - bn異質結的-特性,測試表明異質結具有明顯的整流特性,反向飽和電流3 . 7x10 “ ’ a ,擊穿電壓高達30v導通電壓為14v ,應用p七en異質結能帶圖對其卜v特性做出了定性解釋。